All Silicon Based Memristive Devices and Arrays

Primary Inventors: 
Description: 

A new low power resistance random access memory (RRAM) device based on silicon materials has been invented. RRAM devices are non-volatile memory devicesas well as promising candidates to replace FLASH memory and become the front runner among non-volatile memories. Instead of charge storage, RRAM uses high and low resistance as state variables. RRAM devices are attractive due to their fast switch speed, overwrite ability without erase, low power consumption, high endurance and long retention times. However, RRAM devices with low programming voltages and excellent device-to-device performance repeatability are still yet to be implemented. The current invention addresses these issues. Moreover, unlike other RRAM devices currently under development, these devices use only silicon-based materials making them compatible with CMOS technology. Altogether, these improvements make this new RRAM device an attractive option for commercial development.

Applications: 
  • Resistance Random Access Memory (RRAM) Device
Advantages: 

 

RRAM Devices

RRAM Devices under development

THIS INVENTION

Low programming voltage

X

Yes

Consistent device-to-device performance

X

Yes

Silicon-based

X

Yes

 
Licensing Status: 
Available for Licensing or Sponsored Research
Patent Status: 

Patent Pending

Docket: 
UMA 14-009
For More Information: 

Burnley Jaklevic, Ph.D.
Senior Licensing Officer
Phone: 413-577-0651
EMail: bjaklevic@research.umass.edu