The University of Massachusetts Amherst
 
A B C D F G H J K L M N P R S T V W X Y Z

Please select the first letter of the last name you are looking for.

Joseph Bardin

Assistant Professor

Device modeling. Noise, dc, and RF properties of transistors at cryogenic temperatures. Millimeter wave and sub-millimeter wave active integrated circuit design. Self-healing and reconfigurable RF/mixed-signal integrated circuits in CMOS technologies and beyond.

Learn more at ece.umass.edu/faculty/joseph-bardin

Academic Background

  • B.S.E.E. University of California, Santa Barbara, 2003
  • M.S.E.E. University of California, Los Angeles, 2005
  • Ph.D. California Institute of Technology, 2009
J.C. Bardin and S. Weinreb, "A DC-4 GHz 270Ω differential SiGe low-noise amplifier for cryogenic applications," Microwave Integrated Circuits Conference (EuMIC), 2010 European, vol., no., pp.186-189, 27-28 Sept. 2010
J.C. Bardin, Silicon-Germanium Heterojunction Bipolar Transistors for Extremely Low-Noise Applications, Ph.D Dissertation, California Institute of Technology, June 2009.
J.C. Bardin and S. Weinreb, "A 0.1-5 GHz Cryogenic SiGe LNA," IEEE Microwave and Wireless Component Letters, vol.19, no.6, pp.407-409, June 2009.
S . Weinreb, J.C. Bardin, H. Mani, and G. Jones, "Matched Wideband Low-Noise Amplifiers for Radio Astronomy," Review of Scientific Instruments, Vol. 80, April 2009.
J.C. Bardin and S. Weinreb, "A 0.5–20GHz Quadrature Downconverter," 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp.186-189, 13-15 Oct. 2008.
T.K. Thrivikraman, J.Yuan, J.C. Bardin, H. Mani, S.D. Phillips, W-M L. Kuo, J.D. Cressler and S. Weinreb, "SiGe X-BAND HBT LNAs for Ultra-Low-Noise Cryogenic Receivers," IEEE Microwave and Wireless Components, Vol. 18, No. 7, July 2008.
 
Contact Info

Electrical and Computer Engineering
215H Marcus Hall
100 Natural Resources Road
Amherst, MA 01003

(413) 545-2463
jbardin@ecs.umass.edu

ece.umass.edu/faculty/joseph-bardin