Device modeling. Noise, dc, and RF properties of transistors at cryogenic temperatures. Millimeter wave and sub-millimeter wave active integrated circuit design. Self-healing and reconfigurable RF/mixed-signal integrated circuits in CMOS technologies and beyond.
Learn more at ece.umass.edu/faculty/joseph-bardin
- B.S.E.E. University of California, Santa Barbara, 2003
- M.S.E.E. University of California, Los Angeles, 2005
- Ph.D. California Institute of Technology, 2009
J.C. Bardin and S. Weinreb, "A DC-4 GHz 270Ω differential SiGe low-noise amplifier for cryogenic applications," Microwave Integrated Circuits Conference (EuMIC), 2010 European, vol., no., pp.186-189, 27-28 Sept. 2010
J.C. Bardin, Silicon-Germanium Heterojunction Bipolar Transistors for Extremely Low-Noise Applications, Ph.D Dissertation, California Institute of Technology, June 2009.
J.C. Bardin and S. Weinreb, "A 0.1-5 GHz Cryogenic SiGe LNA," IEEE Microwave and Wireless Component Letters, vol.19, no.6, pp.407-409, June 2009.
S . Weinreb, J.C. Bardin, H. Mani, and G. Jones, "Matched Wideband Low-Noise Amplifiers for Radio Astronomy," Review of Scientific Instruments, Vol. 80, April 2009.
J.C. Bardin and S. Weinreb, "A 0.5–20GHz Quadrature Downconverter," 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp.186-189, 13-15 Oct. 2008.
T.K. Thrivikraman, J.Yuan, J.C. Bardin, H. Mani, S.D. Phillips, W-M L. Kuo, J.D. Cressler and S. Weinreb, "SiGe X-BAND HBT LNAs for Ultra-Low-Noise Cryogenic Receivers," IEEE Microwave and Wireless Components, Vol. 18, No. 7, July 2008.