Contamination Suppression in Chemical Fluid Deposition

Primary Inventors: 
Description: 

This invention relates to methods for depositing materials onto a substrate surface or into a porous solid.  Thin filsm of materials such as metals, semiconductors, or metal oxides insulators are of great importance inthe micro-electronics industry. Fabrication of integrated circuits involves formation of high purity thin films, often in multiple layers, on patterned substrates, commonly using chemical vapor deposition.

The invention is based on the discovery that contamination, e.g., oxidation, of material deposited onto a substrate surface or into a porous solid can be suppressed through the appropriate selection of a material precursor, delivery agent (e.g. solvent), reaction conditions (e.g., temperature), and/or presence of additioal agents.

See the link to the PDF of the Patent below.

Applications: 

Production of Thin Films for micro-electronics

Advantages: 

Produces high purity thin films at temperatures lower than conventional Chemical Vapor Deposition (CVD) temperatures.

Licensing Status: 
Available for Licensing
Patent Status: 

Patent US 6,984,584 issued

Docket: 
UMA 02-03

See Patent Link Above

For More Information: 

Ling X. Shen, Ph.D., M.B.A.
Licensing Officer
Commercial Ventures and Intellectual Property
Phone: 413-545-5276
E-mail: lxshen@research.umass.edu