UMass Amherst

Massimo V. Fischetti

Max Fischetti

Professor, Dept. of Electrical & Computer Engineering
215J Marcus Hall, University of Massachusetts
Amherst, MA 01003-9292
(413) 577-1419
fischetti@ecs.umass.edu
http://www.ecs.umass.edu/index.pl?id=4597

Theory of Electronic Transport

I study electronic transport in semiconductors and insulators, especially in small semiconductor devices, both semiclassically (using the Boltzmann transport equation, BTE) and quantum mechanically. The BTE is solved either in its linearized form to study carrier mobility in low-field situations, or with Monte Carlo methods, also accounting for a realistic band-structure. Ballistic quantum transport is studied with self-consistent Schroedinger-Poisson solvers (with open boundary conditions), the inclusion of scattering with a Master Equation approach. Applications are mainly in the area of CMOS-VLSI technology, especially regarding transport in strained Si, thin layers, and quantum-confined structures.

Research Interest Potential Application
Monte Carlo simulations of electronic transport in small semiconductor devices Prediction of the performance of novel devices in VLSI technology
Ballistic quantum transport in small "conventional devices" Assessment of the importance of quantum effects in small VLSI devices
Dissipative quantum transport in VLSI devices Estimation of the performance of ultra-small devices for VLSI technology
Quantum electronic transport (ballistic and dissipative) in small structures Gauging the feasibility of logic "unconventional" devices (SET, nanowires, CNTs, etc.)

Honors and Awards

  • IBM Technical Innovation Awards, 1987
  • IBM Research Division Award, 1993

Publications

  1. M.V. Fischetti and S.E. Laux, "Monte Carlo Analysis of Electron Transport in Small Semiconductor Devices Including Band-Structure and Space-Charge Effects", Phys. Rev. B 38, 9721 (1988).
  2. M. V. Fischetti and S. E. Laux, "Monte Carlo study of electron transport in Si inversion layers", Phys. Rev. B 48, 2244 (1993).
  3. M. V. Fischetti, "Master equation approach to the study of electronic transport in small semiconductor devices", Phys. Rev. B 59, 4901 (1999).
  4. M. V. Fischetti and S. E. Laux, "Performance degradation of small silicon devices caused by long-range Coulomb interactions", Appl. Phys. Lett. 76, 2277 (2000).
  5. S. E. Laux, A. Kumar, and M. V. Fischetti, "Analysis of Quantum Ballistic Electron Transport in Ultra-Small Semiconductor Devices Including Space-Charge Effects", J. Appl. Phys. 95, 5545 (2004).