UMass Amherst

Dimitrios Maroudas

Professor, Dept. of Chemical Engineering
157B Goessman, University of Massachusetts
Amherst, MA 01003-9292
(413) 545-3617
maroudas@ecs.umass.edu
http://www.ecs.umass.edu/che/faculty/maroudas.html

Computational Materials Science & Nanotechnology, Electronic Materials

My research interests are in the area of computational materials science & engineering. My research aims at the predictive modeling of structure, properties, dynamics, processing, and function of electronic and structural materials, especially semiconductor and metallic thin films and nanostructures used in the fabrication of electronic, optoelectronic, and photovoltaic devices. This is pursued by development and implementation of multiscale modeling tools based on methods of computational qauntum, statistical, and continuum mechanics. Most recently, we have emphasized on developing a “global multiscale computational framework” for complex systems modeling that is particularly promising for predictive modeling of nanostructured materials processing & function.

Research Interest Potential Application
Modeling of electromechanically-induced failure of metallic thin films mediated by dynamics of processing-related nanovoids Improved reliability of metallic interconnect lines in future generations of integrated circuits
Modeling of plasma deposition and post-deposition treatment of amorphous and nanocrystalline silicon thin films Improved structural quality and electronic properties of silicon thin films used in the fabrication of optoelectronic and photovoltaic devices
Modeling of lattice-mismatch strain relaxation in semiconductor heterostructures grown by strained-layer epitaxy Strain relaxation engineering, including compliant substrate engineering, of semiconductor thin films and confined quantum structures for applications in electronics and optoelectronics
Modeling of the deformation behavior and mechanical reliability of mesoporous silica structures (with J. J. Watkins) Systematic design of novel high-k dielectric materials with regular nanostructure for microelectronic devices
Enabling atomic-scale dynamical simulators to perform system-level analysis Systematic parametric studies for establishing process-structure-function relationships toward optimal design of nanostructured materials

Honors and Awards

  • Co-Organizer, National Academy of Engineering's Tenth Annual Symposium on Frontiers of Engineering, Irvine, California, 2004
  • Camille Dreyfus Teacher-Scholar Award, 1999
  • Robert G. Rinker American Institute of Chemical Engineers (AIChE) Outstanding Teaching Award, Department of Chemical Engineering, UCSB, 1996
  • Faculty Research Fellowship Award, Oak Ridge Associated Universities, Oak Ridge Institute for Science and Education, 1996
  • National Science Foundation CAREER Award, 1995
  • Panchiakon Foundation Scholarship Award, Piraeus, Greece, 1988
  • Economou Award for Academic Excellence, Athens, Greece, 1987
  • Thomaidis Award for Academic Excellence, Athens, Greece, 1986
  • Tiftixis Foundation Award, Athens, Greece, 1986
  • National Fellowship Foundation Award, Greece, 1982
  • Hamogeorgakis Award for Academic Excellence, Athens, Greece, 1983
  • Mathematical Society of Greece Award, Annual Contest, 1982

Publications

  1. M. R. Gungor and D. Maroudas, “Modeling of Electromechanically-Induced Failure of Passivated Metallic Thin Films Used in Device Interconnections,” International Journal of Fracture109, 47-68 (2001).
  2. S. Ramalingam, S. Sriraman, E. S. Aydil, and D. Maroudas, “Evolution of Structure, Morphology, and Reactivity of Hydrogenated Amorphous Silicon Film Surfaces Grown by Molecular-Dynamics Simulation,” Applied Physics Letters 78, 2685-2687 (2001).
  3. S. Sriraman, S. Agarwal, E. S. Aydil, and D. Maroudas, “Mechanism of Hydrogen-Induced Crystallization of Amorphous Silicon,” Nature 418, 62-65 (2002).
  4. A. G. Makeev, D. Maroudas, and I. G. Kevrekidis, “`Coarse’ Stability and Bifurcation Analysis of Stochastic Simulators: Kinetic Monte Carlo Examples,” Journal of Chemical Physics 116, 10083-10091 (2002).
  5. L. A. Zepeda-Ruiz, W. H. Weinberg, and D. Maroudas, “Combined Effects of Substrate Compliance and Film Compositional Grading on Strain Relaxation in Layer-by-Layer Semiconductor Heteroepitaxy: The Case of InAs/In0.50Ga0.50As/GaAs(111)A,” Surface Science 540, 363-378 (2003).